Renesas Electronics Announces Low-Loss Silicon Carbide (SiC) Power Device Series Integrating Power Conversion Circuit in a Single Package<p><a href="
http://sg.renesas.com/press/news/2012/news20120124.jsp?campaign=RSSNews"><img src="
http://sg.renesas.com/media/press/news/2012/20120124_small.jpg" align="left" width="125" height="82" border="0" hspace="7" alt="Renesas Electronics Silicon Carbide (SiC) Power Device Series"/></a>TOKYO, Japan, January 24, 2011 — Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the availability of three silicon carbide (SiC) compound power devices, the RJQ6020DPM, the RJQ6021DPM and the RJQ6022DPM, that incorporate multiple SiC diodes and multiple power transistors in a single package to compose a power converter circuit or switching circuit. These are the second series of power semiconductor products from Renesas to employ SiC, a new material effective in reducing loss, and they are intended for use in home appliances such as air conditioners, PC servers, and power electronics products such as solar power generation systems.</p><br clear="all"/>
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Renesas Electronics Announces Low-Loss Silicon Carbide (SiC) Power Device Series Integrating Power Conversion Circuit in a Single Package
