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Author Topic: Why do diode's need a threshold voltage?  (Read 371 times)
n1k35h
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« on: June 30, 2011, 01:33:18 PM »

doing some revision and looking at the I against V graph, please also explain why the graph is shape like this.

i know that the current increases a fair amount


http://upload.wikimedia.org/wikibooks/en/e/eb/V-I_diode.png
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Lex_Lodge
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« Reply #1 on: July 24, 2011, 02:32:31 AM »

What you should look at to understand this is the properties of the semiconductor PN junction.
The threshold isn't really a need, but an effect of forming the semiconductor.
It developed what is called a "barrier region."  This is what must be overcome for the diode to be forward biased and conducting.
Without the barrier region a semiconductor would be fully a conductor (or insulator).
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Manish
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« Reply #2 on: July 30, 2011, 11:26:23 AM »

they don't need, they have   lol
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Muhammad
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« Reply #3 on: July 31, 2011, 10:52:36 PM »

Because for an unbiased diode there is a potential barrier of 0.7V across PN junction. So to make the diode conduct at least this much forward bias is needed to overcome the barrier
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u_n__o
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« Reply #4 on: August 01, 2011, 01:39:17 AM »

There is actually no real "threshold".  The forward current i of a diode increases exponentially with voltage and decreases with temperature, typically i = i0[1 + exp(ev/kT)] where i0 is the so-called 'leakage' current (the current for a highly reverse-biased diode); e is the electronic charge, v is the forward diode voltage, T is Kelvin temperature, and k is Bolzmann's constant.  kT/e is about 26 mV at room temperature.  Any exponential builds up slowly at first and then faster.  The slower region is typically called the threshold voltage.  So e.g. a silicon diode will operate around a forward drop of about 700 mV because below that voltage there is very little current, as the formula shows.  Then i = i0exp(ev/kT) is obviously entirely adequate since exp(700/26) = 4.9e11 >> 1.

If i0 = 2.04e-12 then we'd have 1 ampere at 700 mV.  But look at what happens for 500 mV: 2.2e8*2.04e-12 = only 0.45 mA.  So people tend to call 700 mV as the 'threshold' voltage but it's a matter of semantics only.
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MikeY
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« Reply #5 on: August 01, 2011, 02:31:37 AM »

The link is not bad for explanation : what you have is a typical silicon diode response

http://webphysics.davidson.edu/alumni/jocowan/exp1doc.htm gives some results for typical silicon and germanium diodes - if you look for type III semiconductors like GaN you can find other responses.
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